I am a researcher working on the development of wide-bandgap (WBG) GaN/GaO high-voltage power devices.
Hey! My name is Xingyu Zhou (周星宇) and come from Jiangsu province, China. I am currently a researcher working on the development of wide-bandgap (WBG) GaN/GaO high-voltage power devices.
I have obtained a Master of Science (MSc) degree from the Chinese Academy of Sciences, focusing on the research of theoretical modeling and the wafer-to-device fabrication of GaN power MEMS devices whose output power can be effectively modulated by external force and magnetic field. I have published three peer-reviewed high-impact factor papers on this topic as the first author and co-first author, including Advanced Electronic Materials, Nature Communications, and ACS Nano.
Furthermore, I also received a Bachelor of Engineering degree in Electrical Engineering from Nanjing University of Aeronautics and Astronautics, where I studied circuit topology design and control system modeling of high step-up voltage gain DC-DC power electronics converters.
I am interested in the combined research of WBG-enabled power electronics and am committed to the R&D of next-generation renewable energy conversion technologies. My research interest focus on: